AOB10B60D Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 600V, 10A Alpha IGBT with Diode

AOB10B60D
600V, 10A Alpha IGBT ^TM with Diode
General Description
Product Summary
The Alpha IGBT^TM line of products offers best-in-class
performance in conduction and switching losses, with
robust short circuit capability. They are designed for ease
of paralleling, minimal gate spike under high dV/dt
conditions and resistance to oscillations. The soft co-
package diode is targeted for minimal losses in motor
control applications.
V_CE
I_C (T_C=100°C)
V_CE(sat) (T_C=25°C)
600V
10A
1.53V
Top View
TO-263
C
D²PAK
C
E
G
AOB10B60D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Collector-Emitter Voltage
V _CE
Gate-Emitter Voltage
V _GE
Continuous Collector ^TC=25°C
Current
T_C=100°C
I_C
Pulsed Collector Current, Limited by T_Jmax
I _CM
Turn off SOA, V_CE ≤ 600V, Limited by T_Jmax
I _LM
Continuous Diode
Forward Current
T_C=25°C
T_C=100°C
I_F
Diode Pulsed Current, Limited by T_Jmax
I _FM
Short circuit withstanding time V_GE = 15V, V_CE
≤ 400V, Delay between short circuits ≥ 1.0s,
T_C=150°C
T_C=25°C
Power Dissipation T_C=100°C
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
Maximum IGBT Junction-to-Case
Maximum Diode Junction-to-Case
t _SC
P_D
T _J , T _STG
T_L
Symbol
R _{θ JA}
R _{θ JC}
R _{θ JC}
G
AOB10B60D
600
±20
20
10
40
40
20
10
40
10
163
82
-55 to 150
300
AOB10B60D
65
0.92
1.7
E
Units
V
V
A
A
A
A
A
µs
W
°C
°C
Units
°C/W
°C/W
°C/W
Rev0: July 2012
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