AO9926B_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V Dual N-Channel MOSFET

AO9926B
20V Dual N-Channel MOSFET
General Description
The AO9926B uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 1.8V while retaining a 12V
V_GS(MAX) rating. This device is suitable for use as a uni-
directional or bi-directional load switch.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS=2.5V)
R_DS(ON) (at V_GS=1.8V)
20V
7.6A
< 23mΩ
< 26mΩ
< 34mΩ
< 52mΩ
Top View
SOIC-8
Bottom View
Top View
S2 1 8
D2
G2 2 7 D2
S1 ³ 6
D1
G1 ^{4 5}
D1
G1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±12
7.6
6.1
38
2
1.28
-55 to 150
D1
D2
G2
S1
S2
Units
V
V
A
W
°C
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
Units
62.5
°C/W
90
°C/W
40
°C/W
Rev 3: July 2010
www.aosmd.com
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