AO8832 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8832
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO8832 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V while
retaining a 12V V_GS(MAX) rating. It is ESD protected. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration. Standard Product AO8832 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 30V
I_D = 7A (V_GS = 10V)
R_DS(ON) < 24mΩ (V_GS = 10V)
R_DS(ON) < 28mΩ (V_GS = 4.5V)
R_DS(ON) < 31mΩ (V_GS = 3.6V)
R_DS(ON) < 39mΩ (V_GS = 2.5V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
1
8
2
7
3
6
4
5
D1/D2
S2
S2
G2
D1
1.6KΩ
G1
G2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
S1
Maximum
30
±12
7
5.5
30
1.5
0.96
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
67
110
Steady-State
R_θJL
62
Max
85
130
75
D2
1.6KΩ
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.