AO8830 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

AO8830
Common-Drain Dual N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AO8830 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
This device is suitable for use as a uni-directional or
bi-directional load switch, facilitated by its common-
drain configuration. Standard Product AO8830 is Pb-
free (meets ROHS & Sony 259 specifications).
AO8830L is a Green Product ordering option.
AO8830 and AO8830L are electrically identical.
Features
V_DS (V) = 20V
I_D = 6 A (V_GS = 10V)
R_DS(ON) < 27mΩ (V_GS = 10V)
R_DS(ON) < 30mΩ (V_GS = 4.5V)
R_DS(ON) < 41mΩ (V_GS = 2.5V)
R_DS(ON) < 55mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1/D2 1
S1 2
S1 3
G1 4
8 D1/D2
7 S2
6 S2
5 G2
1.6KΩ
G1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
D1
G2
S1
Maximum
20
±12
6
4.8
30
1.5
0.94
-55 to 150
1.6KΩ
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
115
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
70
Max
83
140
85
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.