AO8822_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V Common-Drain Dual N-Channel MOSFET

AO8822
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8822 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V while retaining a 12V V_GS(MAX)
rating. This device is suitable for use as a uni-directional
or bi-directional load switch, facilitated by its common-
drain configuration.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
R_DS(ON) (at V_GS = 3.6V)
R_DS(ON) (at V_GS = 2.5V)
ESD Protected
20V
7A
< 18mΩ
< 22mΩ
< 23mΩ
< 27mΩ
TSSOP8
D
Top View
Bottom View
Pin 1
D1/D2
1
S1 2
S1 ³
G1 ⁴
8
D1/D2
7
S2
6
S2
G
5
G2
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±12
7
6
30
1.5
1
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
63
101
Maximum Junction-to-Lead
Steady-State
R_θJL
64
Max
83
130
83
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 6 : March 2011
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