AO8810_12 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 20V Common-Drain Dual N-Channel MOSFET

AO8810
20V Common-Drain Dual N-Channel MOSFET
General Description
Product Summary
The AO8810 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge. It is ESD protected.
This device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-drain
configuration.
V_DS
I_D (at V_GS=4.5V)
R_DS(ON) (at V_GS= 4.5V)
R_DS(ON) (at V_GS = 4.0V)
R_DS(ON) (at V_GS = 3.1V)
R_DS(ON) (at V_GS = 2.5V)
R_DS(ON) (at V_GS = 1.8V)
ESD protected
20V
7A
< 20mΩ
< 20.5mΩ
< 21.5mΩ
< 23mΩ
< 28mΩ
TSSOP8
Top View
Bottom View
TSSOP-8
Top View
D1
D2
Pin 1
D1/D2 ₁
S1 2
S1 3
G1 ⁴
8 ^D1/D2
7 S2
6 S2
5 _G2
G1 _1.8KΩ
G2 _1.8KΩ
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
20
±8
7
5.7
25
1.5
1.0
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
64
89
Maximum Junction-to-Lead
Steady-State
R_θJL
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 8: Oct. 2012
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