AO8808A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO8808A
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8808A uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
Standard Product AO8808A is Pb-free (meets ROHS
& Sony 259 specifications). AO8808AL is a Green
Product ordering option. AO8808A and AO8808AL
are electrically identical.
Features
V_DS (V) = 20V
I_D = 7.9A (V_GS = 10V)
R_DS(ON) < 14mΩ (V_GS = 10V)
R_DS(ON) < 15mΩ (V_GS = 4.5V)
R_DS(ON) < 20mΩ (V_GS = 2.5V)
R_DS(ON) < 28mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
7.9
6.3
30
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
73
96
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.