AO8807 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO8807
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8807 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch. AO8807
and AO8807L are electrically identical.
- RoHS Compliant
-Halogen Free
Features
V_DS (V) = -12V
I_D = -6.5 A (V_GS = -4.5V)
R_DS(ON) < 20mΩ (V_GS = -4.5V)
R_DS(ON) < 24mΩ (V_GS = -2.5V)
R_DS(ON) < 30mΩ (V_GS = -1.8V)
ESD Protected!
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
Rg
G1
D1
Rg
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_A=25°C
Current
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-12
±8
-6.5
-5
-60
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^AD
t ≤ 10s
Steady-State
R_θJA
73
96
90
125
Maximum Junction-to-Lead
Steady-State
R_θJL
63
75
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com