AO8806 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

Dec 2002
AO8806
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
Features
The AO8806 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a uni-directional or bi-
directional load switch, facilitated by its common-
drain configuration.
V_DS (V) = 20V
I_D = 6 A
R_DS(ON) < 25mΩ (V_GS = 4.5V)
R_DS(ON) < 30mΩ (V_GS = 2.5V)
R_DS(ON) < 40mΩ (V_GS = 1.8V)
D1/D2
S1
S1
G1
TSSOP-8
Top View
1
8
2
7
3
6
4
5
D1/D2
S2
S2
G2
D1
D2
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
6.4
5.4
30
1.5
1.08
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
64
89
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
53
Max
83
120
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.