AO8803 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO8803
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO8803 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications. It is ESD protected. Standard Product
AO8803 is Pb-free (meets ROHS & Sony 259
specifications). AO8803L is a Green Product ordering
option. AO8803 and AO8803L are electrically
identical.
Features
V_DS (V) = -12V
I_D = -7 A (V_GS = -4.5V)
R_DS(ON) < 18mΩ (V_GS = -4.5V)
R_DS(ON) < 22mΩ (V_GS = -2.5V)
R_DS(ON) < 29mΩ (V_GS = -1.8V)
ESD Rating: 4KV HBM
TSSOP-8
Top View
D1 1
S1 2
S1 3
G1 4
8 D2
7 S2
6 S2
5 G2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-12
±8
-7
-5.8
-20
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
Typ
t ≤ 10s
Steady-State
R_θJA
73
96
Steady-State
R_θJL
63
Max
90
125
75
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.