AO7600 Datasheet, PDF (1/7 Pages) List of Unclassifed Manufacturers – Complementary Enhancement Mode Field Effect Transistor

AO7600
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO7600/L uses advanced trench
technology MOSFETs to provide excellent
R_DS(ON) and low gate charge. The
complementary MOSFETs may be used
to form a level shifted high side switch, an
inverter, and for a host of other
applications. Both devices are ESD
protected. AO7600 and AO7600L are
electrically identical.
-RoHS Compliant
-AO7600L is Halogen Free
Features
n-channel
V_DS (V) = 20V
I_D = 0.9A (V_GS=4.5V)
p-channel
-20V
-0.6A (V_GS=-4.5V)
R_DS(ON)
R_DS(ON)
< 300mΩ (V_GS=4.5V) < 550mΩ (V_GS=-4.5V)
< 350mΩ (V_GS=2.5V) < 700mΩ (V_GS=-2.5V)
< 450mΩ (V_GS=1.8V) < 950mΩ (V_GS=-1.8V)
SC-70-6
(SOT-323)
Top View
D1
D2
G
G
S1 1 6 D1
G1 ^{2 5} G2
D2 ^{3 4} S2
S1
n-channel
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain
T_A=25°C
0.9
Current ^A
T_A=70°C
I_D
0.7
Pulsed Drain Current ^B
I_DM
5
Power Dissipation
T_A=25°C
T_A=70°C
P_D
0.3
0.19
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-20
±8
-0.6
-0.48
-3
0.3
0.19
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Device
n-ch
n-ch
n-ch
p-ch
p-ch
p-ch
Typ Max Units
360 415 °C/W
400 460 °C/W
300 350 °C/W
360 415 °C/W
400 460 °C/W
300 350 °C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com