AO7417 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO7417
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO7417/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.5V, in the
small SOT363 footprint. This device is suitable for
use in buck convertor.
AO7417 and AO7417L are electrically identical.
-RoHS Compliant
-AO7417L is Halogen Free
V_DS (V) = -20V
I_D = -2 A
R_DS(ON) < 80mΩ
R_DS(ON) < 100mΩ
R_DS(ON) < 125mΩ
R_DS(ON) < 150mΩ
(V_GS = -4.5V)
(V_GS = -4.5V)
(V_GS = -2.5V)
(V_GS = -1.8V)
(V_GS = -1.5V)
SC-70-6
(SOT-363)
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
10 Sec
Steady State
-20
±8
-2
-1.9
-1.7
-1.6
-20
0.63
0.57
0.4
0.36
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^A Steady-State
R_θJA
160
180
Maximum Junction-to-Lead ^C Steady-State
R_θJL
130
Max
200
220
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.
www.aosmd.com