AO7408 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO7408
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7408 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7408 is Pb-free (meets ROHS
& Sony 259 specifications). AO7408L is a Green
Product ordering option. AO7408 and AO7408L are
electrically identical.
Features
V_DS (V) = 20V
I_D = 2.2 A (V_GS = 4.5V)
R_DS(ON) < 82mΩ (V_GS = 4.5V)
R_DS(ON) < 95mΩ (V_GS = 2.5V)
R_DS(ON) < 120mΩ (V_GS = 1.8V)
SC-70-6
(SOT-323)
Top View
D
D
D
D
G
S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±8
2.2
1.75
10
0.625
0.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
160
180
200
220
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
130
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha Omega Semiconductor, Ltd.