AO7407 Datasheet, PDF (1/5 Pages) Alpha Industries – P-Channel Enhancement Mode Field Effect Transistor

AO7407
20V P-Channel MOSFET
General Description
Product Summary
The AO7407 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with
gate voltages as low as 1.8V. This device is suitable for
use as a load switch or in PWM applications.
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS =-2.5V)
R_DS(ON) (at V_GS=-1.8V)
-20V
-1.2A
< 135mΩ
< 170mΩ
< 220mΩ
SC-70
(SOT-323)
D
Top View
Bottom View
D
D
S
G
S
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
G
S
Maximum
-20
±8
-1.2
-1
-10
0.63
0.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
160
180
Maximum Junction-to-Lead
Steady-State
R_θJL
130
Max
200
220
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: June 2010
www.aosmd.com
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