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AO7405 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor
AO7405
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO7405 uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 2.5V, in the
small SOT363 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Standard Product AO7405 is Pb-free (meets ROHS
& Sony 259 specifications). AO7405L is a Green
Product ordering option. AO7405 and AO7405L are
electrically identical.
Features
VDS (V) = -30V
ID = -1.6A (VGS = -10V)
RDS(ON) < 150mΩ (VGS = -10V)
RDS(ON) < 200mΩ (VGS = -4.5V)
RDS(ON) < 280mΩ (VGS = -2.5V)
SC-70-6
(SOT-363)
Top View
D
D
D
D
G
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current A
TA=70°C
ID
Pulsed Drain Current B
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
-30
±12
-1.6
-1.3
-10
0.625
0.4
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ≤ 10s
Steady-State
RθJA
160
180
Maximum Junction-to-Lead C
Steady-State
RθJL
130
Max
200
220
160
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.