AO7400 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – N-Channel Enhancement Mode Field Effect Transistor

AO7400
30V N-Channel MOSFET
General Description
The AO7400 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V, in the
small SOT323 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
Product Summary
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS =4.5V)
R_DS(ON) (at V_GS =2.5V)
30V
1.7A
< 55mΩ
< 65mΩ
< 85mΩ
SC-70
(SOT-323)
D
Top View
Bottom View
D
D
S
G
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
30
±12
1.7
1.3
15
0.35
0.22
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
300
340
Maximum Junction-to-Lead
Steady-State
R_θJL
280
Max
360
425
320
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: May 2011
www.aosmd.com
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