AO6808 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO6808
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6808/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and operation
with gate voltages as low as 2.5V. This device is suitable
for use as a load switch. It is ESD protected.
AO6808 and AO6808L are electrically identical.
-RoHS Compliant
-AO6808L is Halogen Free
Features
V_DS = 20V
I_D = 6A
(V_GS = 4.5V)
R_DS(ON) = 19mΩ (typical) (V_GS = 4.5V)
R_DS(ON) = 20mΩ (typical) (V_GS = 4.0V)
R_DS(ON) = 21mΩ (typical) (V_GS = 3.1V)
R_DS(ON) = 23mΩ (typical) (V_GS = 2.5V)
TSOP6
Top View
S1 1 6 G1
D1/D2 2 5 D1/D2
S2 _{3 4} G2
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
6
4.6
I_D
4.6
3.7
I_DM
60
Power Dissipation ^{A TA=25°C}
T_A=70°C
1.3
0.8
P_D
0.8
0.5
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
76
118
95
150
Maximum Junction-to-Lead ^C
Steady State RθJL
54
68
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com