AO6806 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor

AO6806
Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6806 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This device
is suitable for use as a load switch or in PWM
applications. AO6806 is Pb-free (meets ROHS & Sony
259 specifications).
V_DS = 20V
I_D = 5.0A
(V_GS = 4.5V)
R_DS(ON) < 33mΩ (V_GS = 4.5V)
R_DS(ON) < 34mΩ (V_GS = 4.0V)
R_DS(ON) < 36mΩ (V_GS = 3.1V)
R_DS(ON) < 40mΩ (V_GS = 2.5V)
TSOP6
Top View
S1 1 6 G1
D1/D2 2 5 D1/D2
S2 _{3 4} G2
D1
2.7KΩ
G1
D2
2.7KΩ
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
5
3.8
I_D
3.8
3
I_DM
25
Power Dissipation ^{A TA=25°C}
T_A=70°C
1.3
0.8
P_D
0.8
0.5
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
76
118
95
150
Maximum Junction-to-Lead ^C
Steady State RθJL
54
68
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com