AO6801E Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V Dual P-Channel MOSFET

AO6801E
30V Dual P-Channel MOSFET
General Description
Product Summary
The AO6801E combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch
and battery protection applications.
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS=-10V)
R_DS(ON) (at V_GS=-4.5V)
R_DS(ON) (at V_GS=-2.5V)
Typical ESD protection
-30V
-2A
< 110mΩ
< 135mΩ
< 185mΩ
HBM Class 1C
TSOP6
D1
Top View
Bottom View
Top View
G1 ₁
S2 2
G2 3
6 D1
5 S1
4 D2
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
G1
G2
S1
Maximum
-30
±12
-2.0
-1.6
-15
0.70
0.45
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
150
185
Maximum Junction-to-Lead
Steady-State
R_θJL
150
Max
180
230
180
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: April 2012
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