AO6801A Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V Dual P-Channel MOSFET

AO6801A
30V Dual P-Channel MOSFET
General Description
The AO6801A uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications.
Product Summary
V_DS
I_D (at V_GS=-10V)
R_DS(ON) (at V_GS =-10V)
R_DS(ON) (at V_GS =-4.5V)
R_DS(ON) (at V_GS =-2.5V)
-30V
-2.3A
< 115mΩ
< 150mΩ
< 200mΩ
TSOP6
Top View
Bottom View
D1
Top View
G1 ₁
6
D1
S2 2
5
S1
G2 3
4 D2
G1
G2
S1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±12
-2.3
-2
-11
1.15
0.73
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
78
106
Maximum Junction-to-Lead
Steady-State
R_θJL
64
Max
110
150
80
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 0: Dec. 2011
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