AO6800 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – Dual N-Channel Enhancement Mode Field Effect Transistor

AO6800
30V Dual N-Channel MOSFET
General Description
Product Summary
The AO6800 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as
a load switch or in PWM applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS= 10V)
R_DS(ON) (at V_GS = 4.5V)
R_DS(ON) (at V_GS = 2.5V)
30V
3.4A
< 60mΩ
< 70mΩ
< 90mΩ
TSOP6
D1
Top View
Bottom View
Top View
G1 1 6
S2 2 5
G2 3 4
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
D1
S1
D2
G1
Maximum
30
±12
3.4
2.7
20
1.15
0.73
-55 to 150
G2
S1
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
78
106
Maximum Junction-to-Lead
Steady-State
R_θJL
64
Max
110
150
80
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: December 2010
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