AO6706 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6706
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO6706 uses advanced trench technology to provide
excellent R _DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6706 is Pb-free (meets ROHS & Sony
259 specifications). AO6706L is a Green Product ordering
option. AO6706 and AO6706L are electrically identical.
Features
V_DS (V) = 30V
I_D = 3.6A (V_GS = 10V)
R_DS(ON) < 65mΩ (V_GS = 10V)
R_DS(ON) < 75mΩ (V_GS = 4.5V)
R_DS(ON) < 160mΩ (V_GS = 2.5V)
SCHOTTKY
V_DS (V) = 20V, I_F = 1A, V_F<0.5V@0.5A
TSOP6
Top View
D
K
A 16 K
S 2 5 N/C
G 34 D
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
T_A=25°C
T_A=70°C
I_F
Pulsed Forward Current ^B
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
30
±12
3.3
2.6
10
1.15
0.7
-55 to 150
Parameter: Thermal Characteristics MOSFET
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A
Steady-State
Maximum Junction-to-Lead ^C
Steady-State
Symbol
R_θJA
R_θJL
R_θJA
R_θJL
Typ
80.3
117
43
109.4
136.5
58.5
Schottky
20
2
1
10
0.92
0.59
-55 to 150
Max
110
150
80
135
175
80
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.