AO6700 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

AO6700
N-Channel Enhancement Mode Field Effect Transistor
with Schottky Diode
General Description
The AO6700 uses advanced trench technology to provide
excellent R _DS(ON) and low gate charge. A Schottky diode is
provided to facilitate the implementation of a bidirectional
blocking switch, or for DC-DC conversion applications.
Standard Product AO6700 is Pb-free (meets ROHS & Sony
259 specifications). AO6700L is a Green Product ordering
option. AO6700 and AO6700L are electrically identical.
Features
V_DS (V) = 20V
I_D = 4.1A (V_GS = 4.5V)
R_DS(ON) < 50mΩ (V_GS = 4.5V)
R_DS(ON) < 65mΩ (V_GS = 2.5V)
R_DS(ON) < 95mΩ (V_GS = 1.8V)
SCHOTTKY
V_DS (V) = 20V, I_F = 1A, V_F<0.5V@0.5A
TSOP6
Top View
D
K
K 16 A
S 25 D
G ₃₄ D
G
S
A
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current ^A
Pulsed Drain Current ^B
T_A=25°C
T_A=70°C
I_D
I_DM
Schottky reverse voltage
V_KA
Continuous Forward Current ^A
Pulsed Forward Current ^B
T_A=25°C
T_A=70°C
I_F
I_FM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
MOSFET
20
±8
4.1
3.3
10
1.39
0.89
-55 to 150
Parameter: Thermal Characteristics MOSFET
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
70
102
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
51
Thermal Characteristics Schottky
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
129
158
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
52
Schottky
20
1.5
1
10
0.78
0.5
-55 to 150
Max
90
130
80
160
200
80
Units
V
V
A
V
A
W
°C
Units
°C/W
°C/W