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AO6605 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor | |||
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AO6605
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6605 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6605 is Pb-free (meets ROHS &
Sony 259 specifications). AO6605L is a Green
Product ordering option. AO6605 and AO6605L are
electrically identical.
Features
n-channel
p-channel
VDS (V) = 20V
-20V
ID = 1.9A (VGS = 4.5V) -2.5A
RDS(ON)
< 200mâ¦
< 97m⦠(VGS = 4.5V)
< 270mâ¦
< 400mâ¦
< 130m⦠(VGS = 2.5V)
< 190m⦠(VGS = 1.8V)
TSOP6
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1
D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±8
Continuous Drain
TA=25°C
1.7
Current A
TA=70°C
ID
1.4
Pulsed Drain Current B
IDM
15
Power Dissipation
TA=25°C
TA=70°C
PD
1.15
0.73
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Max p-channel
-20
±8
-2.5
-2.0
-15
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ⤠10s
Steady-State
RθJA
78
106
Maximum Junction-to-Lead C
Steady-State
RθJL
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
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