AO6603 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO6603
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6603 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6603 is Pb-free (meets ROHS
& Sony 259 specifications). AO6603L is a Green
Product ordering option. AO6603 and AO6603L are
electrically identical.
Features
n-channel
p-channel
V_DS (V) = 20V
-30V
I_D = 1.7 (V_GS = 4.5V) -2.5A
R_DS(ON)
< 225mΩ (V_GS = 4.5V) < 135mΩ (V_GS = -10V)
< 290mΩ (V_GS = 2.5V) < 185mΩ (V_GS = 2.5V)
< 425mΩ (V_GS = 1.8V) < 265mΩ (V_GS = 1.8V)
TSOP6
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1
D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain T_A=25°C
1.7
Current ^A
T_A=70°C
I_D
1.4
Pulsed Drain Current^B
I_DM
15
Power Dissipation
T_A=25°C
T_A=70°C
P_D
1.15
0.73
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±12
-2.3
-1.8
-30
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
78
106
Maximum Junction-to-Lead^C
Steady-State
R_θJL
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.