AO6602 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO6602
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO6602 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
complementary MOSFETs form a high-speed power
inverter, suitable for a multitude of applications.
Standard Product AO6602 is Pb-free (meets ROHS &
Sony 259 specifications). AO6602L is a Green
Product ordering option. AO6602 and AO6602L are
electrically identical.
Features
n-channel
p-channel
V_DS (V) = 30V
-30V
I_D = 3.1A (V_GS = 10V) -2.7A (V_GS = -10V)
R_DS(ON)
< 75mΩ (V_GS = 10V) < 100mΩ(V_GS = -10V)
< 115mΩ (V_GS = 4.5V) < 180mΩ(V_GS = -4.5V)
TSOP6
Top View
G1 1 6 D1
S2 2 5 S1
G2 3 4 D2
D1
D2
G1
S1
n-channel
G2
S2
p-channel
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±20
Continuous Drain
T_A=25°C
3.1
Current ^A
T_A=70°C
I_D
2.4
Pulsed Drain Current ^B
I_DM
12
Power Dissipation
T_A=25°C
T_A=70°C
P_D
1.15
0.73
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Max p-channel
-30
±20
-2.7
-2.1
-12
1.15
0.73
-55 to 150
Units
V
V
A
W
°C
Thermal Characteristics: n-channel and p-channel
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
78
106
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
64
Max
110
150
80
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.