AO6422 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6422
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6422/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for general purpose application.
AO6422 and AO6422L are electrically identical.
-RoHS Compliant
-AO6422L is Halogen Free
Features
V_DS = 20V
I_D = 5A
R_DS(ON) < 44mΩ
R_DS(ON) < 55mΩ
R_DS(ON) < 72mΩ
(V_GS = 4.5V)
(V_GS = 4.5V)
(V_GS = 2.5V)
(V_GS = 1.8V)
TSOP6
Top View
D 16 D
D 25 D
G ₃₄ S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
20
Gate-Source Voltage
V_GS
±8
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
5
3.9
I_D
4.2
3
I_DM
30
Power Dissipation ^{A TA=25°C}
T_A=70°C
2.0
1.1
P_D
1.3
0.7
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
47.5
74
Maximum Junction-to-Lead ^C
Steady State RθJL
54
Max
62.5
110
68
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com