AO6420 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6420
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6420 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. Standard Product AO6420 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
V_DS (V) = 60V
I_D = 4.2A (V_GS = 10V)
R_DS(ON) < 60mΩ (V_GS = 10V)
R_DS(ON) < 75mΩ (V_GS = 4.5V)
Rg,Ciss,Coss,Crss Tested!
TSOP-6
Top View
D
D 16 D
D 25 D
G 34 S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A,F
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
60
±20
4.2
3.4
20
2.00
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
35
Max
62.5
110
40
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com