AO6415 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO6415
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6415 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
load switch or in PWM applications. It is ESD protected.
Standard Product AO6415 is Pb-free (meets ROHS & Sony
259 specifications). AO6415L is a Green Product ordering
option. AO6415 and AO6415L are electrically identical.
Features
V_DS (V) = -20V
I_D = -3.3A (V_GS = -10V)
R_DS(ON) < 75mΩ (V_GS = -10V)
R_DS(ON) < 100mΩ (V_GS = -4.5V)
R_DS(ON) < 150mΩ (V_GS = -2.5V)
ESD Rating: 2000V HBM
TSOP6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-20
±12
-3.3
-2.7
-14
1.25
0.8
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
82
111
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
56
Max
100
140
70
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.