AO6409 Datasheet, PDF (1/5 Pages) List of Unclassifed Manufacturers – P-Channel Enhancement Mode Field Effect Transistor

AO6409
20V P-Channel MOSFET
General Description
Product Summary
The AO6409 uses advanced trench technology to provide
excellent R_DS(ON), low gate charge and operation with gate
voltages as low as 1.8V. This device is suitable for use as
a load switch applications.
V_DS
I_D (at V_GS=-4.5V)
R_DS(ON) (at V_GS= -4.5V)
R_DS(ON) (at V_GS= -2.5V)
R_DS(ON) (at V_GS= -1.8V)
ESD Protected
-20V
-5.5A
< 41mΩ
< 53mΩ
< 65mΩ
TSOP6
Top View
Bottom View
Top View
D1
6
D
D2
5
D
G
G3
4S
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-20
±8
-5.5
-4.2
-30
2.1
1.3
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
75
Maximum Junction-to-Lead
Steady-State
R_θJL
37
Max
60
90
45
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: Sep 2011
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