AO6405_11 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V P-Channel MOSFET

AO6405
30V P-Channel MOSFET
General Description
Product Summary
The AO6405 uses advanced trench technology to provide
excellent R_DS(ON) with low gate charge. This device is
suitable for use as a load switch or in PWM applications.
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
-30V
-5A
< 52mΩ
< 87mΩ
TSOP6
Top View
Bottom View
Top View
D1
6
D
D2
5
D
G
3
4
S
G
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_D
Pulsed Drain Current ^C
I_DM
T_A=25°C
Power Dissipation ^B T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-30
±20
-5
-4.2
-20
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Lead
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
47.5
74
37
Max
62.5
110
50
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Rev 5: Nov 2011
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