AO6404 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AO6404
N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6404 uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V while
retaining a 12V V_GS(MAX) rating. It is ESD protected.
Standard Product AO6404 is Pb-free (meets ROHS
& Sony 259 specifications). AO6404L is a Green
Product ordering option. AO6404 and AO6404L are
electrically identical.
Features
V_DS (V) = 20V
I_D = 8.6A (V_GS = 10V)
R_DS(ON) < 17mΩ (V_GS = 10V)
R_DS(ON) < 18mΩ (V_GS = 4.5V)
R_DS(ON) < 24mΩ (V_GS = 2.5V)
R_DS(ON) < 33mΩ (V_GS = 1.8V)
ESD Rating: 2000V HBM
TSOP-6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
20
±12
8.6
6.8
30
2
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
45
70
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
33
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.