AO6403 Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO6403
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO6403 uses advanced trench technology to
provide excellent R_DS(ON), and ultra-low low gate
charge. This device is suitable for use as a load
switch or in PWM applications. It may be used in
common-drain configuration to form a bidirectional
blocking switch. AO6403 is Pb-free (meets ROHS &
Sony 259 specifications). AO6403L is a Green
Product ordering option. AO6403 and AO6403L are
electrically identical.
TSOP6
Top View
D 16 D
D 25 D
G 34 S
Features
V_DS (V) = -30V
I_D = -6 A (V_GS = -10V)
R_DS(ON) < 35mΩ (V_GS = -10V)
R_DS(ON) < 58mΩ (V_GS = -4.5V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
-30
±20
-6
-5
-30
2
1.44
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Typ
47.5
74
37
Max
62.5
110
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.