AO6402A_12 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 30V N-Channel MOSFET

AO6402A
30V N-Channel MOSFET
General Description
The AO6402A uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
Product Summary
V_DS (V) = 30V
I_D = 7.5A
R_DS(ON) < 24mΩ
R_DS(ON) < 35mΩ
(V_GS = 10V)
(V_GS = 10V)
(V_GS = 4.5V)
TSOP6
Top View
Bottom View
Top View
D1
D2
6D
5D
G3
4S
G
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^A,F
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Maximum
30
±20
7.5
6.0
64
2.0
1.28
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
74
62.5
110
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
54
68
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com