AO6401A Datasheet, PDF (1/4 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO6401A
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AO6401A uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO6401A is Pb-free (meets ROHS &
Sony 259 specifications).
V_DS = -30V
I_D = -5.0A
(V_GS = -10V)
R_DS(ON) < 44mΩ (V_GS = -10V)
R_DS(ON) < 55mΩ (V_GS = -4.5V)
R_DS(ON) < 82mΩ (V_GS = -2.5V)
TSOP6
Top View
D 16 D
D 25 D
G 34 S
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec Steady State
Drain-Source Voltage
V_DS
-30
Gate-Source Voltage
V_GS
±12
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
Pulsed Drain Current ^B
-5
-3.7
I_D
-3.7
-3.2
I_DM
-25
Power Dissipation ^A
T_A=25°C
T_A=70°C
1.6
1.0
P_D
1.0
0.7
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
t ≤ 10s
Maximum Junction-to-Ambient ^A Steady State
R_θJA
58
94
80
120
Maximum Junction-to-Lead ^C
Steady State R_θJL
37
50
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com