AO5803E Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual P-Channel Enhancement Mode Field Effect Transistor

AO5803E
Dual P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5803E/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge, and
operation with gate voltages as low as 1.8V, in the
small SC89-6L footprint. It can be used as load
switching, and wide variety of FET applications.
AO5803E and AO5803EL are electrically identical.
-RoHS compliant
-AO5803EL is Halogen Free
Features
V_DS (V) = -20V
I_D = -0.6A (VGS = -4.5V)
R_DS(ON) < 0.8Ω (V_GS = -4.5V)
R_DS(ON) < 1.0Ω (V_GS = -2.5V)
R_DS(ON) < 1.25Ω (V_GS = -1.8V)
ESD PROTECTED
S1
G1
D2
SC-89-6
D1
G1
G2
D1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TA^=25°C
Current ^{A, F}
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
Junction and Storage Temperature Range T_J, T_STG
S1
Maximum
-20
±8
-0.6
-0.4
-3
0.4
0.24
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
275
360
330
450
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
300
350
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com