AO5600E Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Complementary Enhancement Mode Field Effect Transistor

AO5600E
Complementary Enhancement Mode Field Effect Transistor
General Description
The AO5600E/L uses advanced trench technology
MOSFETs to provide excellent R_DS(ON) and low gate
charge. The complementary MOSFETs may be used
in H-bridge, Inverters and other
applications.AO5600E and AO5600EL are electrically
identical.
-RoHS compliant
-AO5600EL is Halogen Free
ESD PROTECTED!
Features
n-channel
V_DS (V) = 20V, I_D = 0.6A (V_GS=4.5V)
R_DS(ON)< 0.65Ω (V_GS= 4.5V)
R_DS(ON)< 0.75Ω (V_GS= 2.5V)
R_DS(ON)< 0.95Ω (V_GS= 1.8V)
p-channel
V_DS (V) = -20V, I_D = -0.5A (V_GS=-4.5V)
R_DS(ON)< 0.8Ω (V_GS= -4.5V)
R_DS(ON)< 1.0Ω (V_GS= -2.5V)
R_DS(ON)< 1.3Ω (V_GS= -1.8V)
S1
G1
D2
SC-89-6
D1
G2
S2
D1
1
G1
G2
S1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max n-channel Max p-channel
Drain-Source Voltage
V_DS
20
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain ^TC^=25°C
0.6
-0.5
Current ^B,H
T_C=100°C
I_D
0.4
-0.38
Pulsed Drain Current ^B
I_DM
3
-1
Power Dissipation
T_C=25°C
T_C=100°C
P_D
0.38
0.24
0.38
0.24
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics: n-channel and p-channel
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Symbol Device Typ
Max
t ≤ 10s
Steady-State
R_θJA
n-ch
n-ch
275
360
330
450
Maximum Junction-to-Lead ^C
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Steady-State
R_θJL
n-ch
300
350
t ≤ 10s
Steady-State
R_θJA
p-ch
p-ch
275
360
330
450
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
p-ch
300
350
D2
S2
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com