AO5401E Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – P-Channel Enhancement Mode Field Effect Transistor

AO5401E
P-Channel Enhancement Mode Field Effect Transistor
General Description
The AO5401E/L uses advanced trench technology to
provide excellent R_DS(ON), low gate charge and
operation with gate voltages as low as 1.8V. This
device is suitable for use as a load switch or in PWM
applications.AO5401E and AO5401EL are electrically
identical.
-RoHS compliant
-AO5401EL is Halogen Free
Features
V_DS (V) = -20V
I_D = -0.5 A (V_GS = -4.5V)
R_DS(ON) < 0.8Ω (V_GS = -4.5V)
R_DS(ON) < 1Ω (V_GS = -2.5V)
R_DS(ON) < 1.3Ω (V_GS = -1.8V)
ESD PROTECTED!
SC89-3L
Top View
D
D
G
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Steady State
Drain-Source Voltage
V_DS
-20
Gate-Source Voltage
V_GS
±8
Continuous Drain ^TA^=25°C
-0.5
-0.5
Current ^AF
T_A=70°C
I_D
-0.45
-0.40
Pulsed Drain Current ^B
I_DM
-1
T_A=25°C
Power Dissipation ^A T_A=70°C
P_D
0.38
0.28
0.24
0.18
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
Symbol
t ≤ 10s
Steady-State
R_θJA
Steady-State
R_θJL
Typ
275
360
300
Max
330
450
350
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com