AO4F800 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4F800
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4F800 uses advanced trench technology to
provide excellent R_DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. Standard Product AOF800 is Pb-free
(meets ROHS & Sony 259 specifications). AOF800L
is a Green Product ordering option. AOF800 and
AOF800L are electrically identical.
Features
Q1
Q2
V_DS (V) = 30V
V_DS(V) = 30V
I_D = 8.3A (V_GS = 10V) I_D=17.7A
R_DS(ON) < 18mΩ
< 6.5mΩ
(V_GS = 10V)
R_DS(ON) < 27mΩ
< 8.5mΩ
(V_GS = 4.5V)
D1 ¹
D1 ²
G1 ³
G2 ⁴
S2 ⁵
S2 ⁶
S2 ⁷
14 _S1
13 _S1
SOIC-14
12
11
D2/S1
10
9
8
D2/S1
D2/S1
D2/S1
D2/S1
D1
D2
Q1
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain _TA=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current^B
I_DM
T_A=25°C
Power Dissipation T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
Parameter: Thermal Characteristics MOSFET Q1
Maximum Junction-to-Ambient^A
t ≤ 10s
Maximum Junction-to-Ambient^A
Steady-State
Maximum Junction-to-Lead^C
Steady-State
Symbol
R_θJA
R_θJL
Max Q1
30
±20
8.3
6.7
30
2
1.28
-55 to 150
Typ
47
83
23
Parameter: Thermal Characteristics MOSFET Q2 Symbol
Typ
Maximum Junction-to-Ambient^A
Maximum Junction-to-Ambient^A
t ≤ 10s
Steady-State
R_θJA
31
59
Maximum Junction-to-Lead^C
Steady-State
R_θJL
16
Q2
Max Q2
30
±20
17.7
13
80
3
2.1
-55 to 150
Max
62.5
110
40
Max
40
75
24
Units
V
V
A
W
°C
Units
°C/W
Units
°C/W
Alpha & Omega Semiconductor, Ltd.