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AO4944 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Dual N-Channel Enhancement Mode Field Effect Transistor
AO4944
Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
Features
SRFET TM The AO4944 uses advanced trench
technology with a monolithically integrated Schottky
diode to provide excellent RDS(ON) and low gate
charge. This device is suitable for use as a low and
high side switch in SMPS and general purpose
applications. Standard product AO4944 is Pb-free
(meets ROHS & Sony 259 specifications).
VDS (V) = 30V
ID = 8.6A
(V GS = 10V)
RDS(ON) < 16mΩ (VGS = 10V)
RDS(ON) < 20mΩ (VGS = 4.5V)
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
SOIC-8
D1
D2
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
G1
G2
S1
S2
Absolute Maximum Ratings T A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TA=25°C
Current AF
TA=70°C
ID
Pulsed Drain Current B
IDM
Avalanche Current B
IAR
Repetitive avalanche energy L=0.3mH B
EAR
Power Dissipation
TA=25°C
TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
8.6
6.9
40
16
38
2
1.3
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Symbol
Typ
t ≤ 10s
Steady-State
RθJA
48
74
Steady-State
RθJL
32
Max
62.5
90
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com