AO4940 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4940
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
The AO4940 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with the
synchronous MOSFET to boost efficiency further. Standard
Product AO4940 is Pb-free (meets ROHS & Sony 259
specifications).
Features
FET1
V_DS (V) = 30V
I_D = 9.1A
R_DS(ON) < 15mΩ
R_DS(ON) < 23mΩ
SOIC-8
SRFET ^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
FET2
V_DS(V) = 30V
I _D=7.5A
(V_GS = 10V)
< 23mΩ
(V_GS = 10V)
< 36mΩ
(V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Max FET1
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain ^TA^=25°C
Current ^AF
T_A=70°C
Pulsed Drain Current ^B
Avalanche Current ^B
Repetitive avalanche energy L=0.3mH ^B
Power Dissipation^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
V_GS
I_DSM
I_DM
I_AR
E_AR
P_DSM
T_J, T_STG
10 sec Steady-State
30
±20
9.1
7.6
7.3
6.1
100
17
43
2
1.4
1.3
0.9
-55 to 150
Max FET2
10 sec Steady-State
30
±20
7.5
6.2
6.0
5.0
50
13
25
2
1.4
1.3
0.9
-55 to 150
Thermal Characteristics FET1(Intergrated Schottky Diode)
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
Max
62.5
90
40
Thermal Characteristics FET2
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A t ≤ 10s}
Maximum Junction-to-Ambient ^{A Steady-State}
R_θJA
48
74
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
Max
62.5
90
40
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com