AO4932_11 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel MOSFET

AO4932
Asymmetric Dual N-Channel MOSFET
SRFET ^TM
General Description
Product Summary
The AO4932 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further.
FET1(N-Channel)
V_DS= 30V
I_D= 11A (V_GS=10V)
R_DS(ON)
< 12.5mΩ (V_GS=10V)
< 15mΩ (V_GS=4.5V)
FET2(N-Channel)
30V
8A (V_GS=10V)
R_DS(ON)
< 19mΩ (VGS=10V)
< 23mΩ (VGS=4.5V)
100% UIS Tested
100% R_g Tested
100% UIS Tested
100% R_g Tested
Top View
SOIC-8
Bottom View
Top View
SRFET^TM
Soft Recovery MOSFET:
D1
Integrated Schottky Diode
D2
G2
D2
S2/D1
G1
S2/D1
S1
S2/D1
G1
G2
S1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max FE1
Max FET2
Drain-Source Voltage
V_DS
30
30
Gate-Source Voltage
V_GS
±12
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
11
8
I_D
9
6.5
I_DM
60
40
I_AS, I_AR
15
19
E_AS, E_AR
11
18
T_A=25°C
Power Dissipation ^B T_A=70°C
2
2
P_D
1.3
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^A t ≤ 10s
Maximum Junction-to-Ambient ^{A D} Steady-State
R_θJA
48
74
Maximum Junction-to-Lead
Steady-State
R_θJL
32
Max
62.5
90
40
D2
S2
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Rev 4: Nov 2011
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