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| AO4932 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor | |||
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AO4932
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AO4932 uses advanced trench technology to
provide excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4932 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
FET1
VDS (V) = 30V
ID = 9A
RDS(ON) < 15.8mâ¦
RDS(ON) < 19.6mâ¦
FET2
VDS(V) = 30V
I D=9A
(VGS = 10V)
<15.8m⦠(VGS = 10V)
<23m⦠(VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±12
Continuous Drain TA=25°C
9.0
Current AF
TA=70°C
IDSM
7.2
Pulsed Drain Current B
IDM
40
Avalanche Current C
IAR
16
Repetitive avalanche energy L=0.3mH C
EAR
38
Power Dissipation
TA=25°C
TA=70°C
PDSM
2.0
1.3
Junction and Storage Temperature Range TJ, TSTG
-55 to 150
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ⤠10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ⤠10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Alpha & Omega Semiconductor, Ltd.
Max FET2
30
±20
9.0
7.2
40
16
38
2.0
1.3
-55 to 150
Units
V
V
A
A
A
mJ
W
°C
Typ
Max
Units
48
62.5
°C/W
74
90
°C/W
32
40
°C/W
Typ
Max
Units
48
62.5
°C/W
74
90
°C/W
32
40
°C/W
www.aosmd.com
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