AO4930 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4930
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
The AO4930 uses advanced trench technology to
provide excellent R _DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost
efficiency further. Standard Product AO4930 is Pb-free
(meets ROHS & Sony 259 specifications).
Features
FET1
V_DS (V) = 30V
I_D = 9.5A
R_DS(ON) < 13.5mΩ
R_DS(ON) < 16mΩ
FET2
V_DS(V) = 30V
I _D=9A
(V_GS = 10V)
<15.8mΩ (V_GS = 10V)
<23mΩ
(V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max FET1
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
V_GS
±12
Continuous Drain T_A=25°C
9.5
Current ^A
T_A=70°C
I_DSM
7.6
Pulsed Drain Current ^B
I_DM
40
Avalanche Current ^B
I_AR
20
Repetitive avalanche energy L=0.3mH ^B
E_AR
60
Power Dissipation^A
T_A=25°C
T_A=70°C
P_DSM
2
1.3
Junction and Storage Temperature Range T_J, T_STG
-55 to 150
Thermal Characteristics FET1
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Thermal Characteristics FET2
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Lead ^C
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJL
Alpha & Omega Semiconductor, Ltd.
Max FET2
30
±20
9.0
7.2
40
16
38
2
1.3
-55 to 150
Units
V
V
A
A
mJ
W
°C
Typ
Max
Units
48
62.5
°C/W
74
90
°C/W
32
40
°C/W
Typ
Max
Units
48
62.5
°C/W
74
90
°C/W
32
40
°C/W