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| AO4926 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor | |||
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AO4926
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET TM
General Description
The AO4926 uses advanced trench technology to provide
excellent R DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A monolithically integrated Schottky diode in
parallel with the synchronous MOSFET to boost efficiency
further. Standard Product AO4926 is Pb-free (meets
ROHS & Sony 259 specifications).
Features
FET1
VDS (V) = 30V
ID = 9.5A
RDS(ON) < 13.5mâ¦
RDS(ON) < 16mâ¦
FET2
VDS(V) = 30V
ID=7.3A (VGS = 10V)
<24m⦠(VGS = 10V)
<29m⦠(VGS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
SRFETTM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol Max FET1 Max FET2
Drain-Source Voltage
VDS
30
30
Gate-Source Voltage
VGS
±12
±12
Continuous Drain TA=25°C
Current AF
TA=70°C
IDSM
Pulsed Drain Current B
IDM
Avalanche Current B
IAR
Repetitive avalanche energy L=0.3mH B
EAR
9.5
7.3
7.8
5.9
40
40
22
12
73
22
Power Dissipation
TA=25°C
TA=70°C
PDSM
2.0
2.0
1.3
1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150
Thermal Characteristics FET1
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ⤠10s
Steady-State
RθJA
48
62.5
74
90
Maximum Junction-to-Lead C
Steady-State
RθJL
32
40
Thermal Characteristics FET2
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
t ⤠10s
Steady-State
RθJA
48
62.5
74
90
Maximum Junction-to-Lead C
Steady-State
RθJL
32
40
Units
V
V
A
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
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