AO4922_11 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel MOSFET

AO4922
Asymmetric Dual N-Channel MOSFET
SRFET ^TM
General Description
The AO4922 uses advanced trench technology to
provide excellent R _DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further.
Product Summary
FET1
V_DS (V) = 30V
I_D = 9A
R_DS(ON) < 15.8mΩ
R_DS(ON) < 18.5mΩ
FET2
V_DS(V) = 30V
I_D=7.3A (V_GS = 10V)
<24mΩ (V_GS = 10V)
<29mΩ (V_GS = 4.5V)
100% UIS Tested
100% Rg Tested
Top View
SOIC-8
Bottom View
SRFET^TM
D1
D2
Soft Recovery MOSFET:
Top View
Integrated Schottky Diode
Pin1
S1 1
G1 2
S2 3
G2 4
8 D1
7 ^D1
6 D2
5 D2
G1
G2
S1
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max FET1 Max FET2
Drain-Source Voltage
V_DS
30
30
Gate-Source Voltage
V_GS
±12
±12
Continuous Drain ^TA^=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
9.0
7.3
7.2
5.9
40
40
22
12
73
22
Power Dissipation^A
T_A=25°C
T_A=70°C
P_DSM
2.0
2.0
1.3
1.3
Junction and Storage Temperature Range T_J, T_STG -55 to 150 -55 to 150
Units
V
V
A
A
mJ
W
°C
Thermal Characteristics FET1
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
90
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
40
Units
°C/W
°C/W
°C/W
Thermal Characteristics FET2
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
90
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
40
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.