AO4922 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4922
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
SRFET ^TM
General Description
The AO4922 uses advanced trench technology to
provide excellent R _DS(ON) and low gate charge. The
two MOSFETs make a compact and efficient switch
and synchronous rectifier combination for use in DC-
DC converters. A monolithically integrated Schottky
diode in parallel with the synchronous MOSFET to
boost efficiency further. Standard Product AO4922 is
Pb-free (meets ROHS & Sony 259 specifications).
AO4922L is a Green Product ordering option.
AO4922L and AO4922 are electrically identical.
Features
FET1
V_DS (V) = 30V
I_D = 9A
R_DS(ON) < 15.8mΩ
R_DS(ON) < 18.5mΩ
FET2
V_DS(V) = 30V
I _D=7.3A (V_GS = 10V)
<24mΩ (V_GS = 10V)
<29mΩ (V_GS = 4.5V)
UIS TESTED!
Rg,Ciss,Coss,Crss Tested
SOIC-8
SRFET^TM
Soft Recovery MOSFET:
Integrated Schottky Diode
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol Max FET1 Max FET2
Drain-Source Voltage
V_DS
30
30
Gate-Source Voltage
V_GS
±12
±12
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_DSM
Pulsed Drain Current ^B
I_DM
Avalanche Current ^B
I_AR
Repetitive avalanche energy L=0.3mH ^B
E_AR
9.0
7.3
7.2
5.9
40
40
22
12
73
22
Power Dissipation^A
T_A=25°C
T_A=70°C
P_DSM
2.0
2.0
1.3
1.3
Junction and Storage Temperature Range T_J, T_STG -55 to 150 -55 to 150
Thermal Characteristics FET1
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
90
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
40
Thermal Characteristics FET2
Parameter
Symbol
Typ
Max
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^A
t ≤ 10s
Steady-State
R_θJA
48
62.5
74
90
Maximum Junction-to-Lead ^C
Steady-State
R_θJL
32
40
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
°C/W
Units
°C/W
°C/W
°C/W
Alpha & Omega Semiconductor, Ltd.