AO4918 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4918
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4918 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4918 is Pb-free (meets ROHS &
Sony 259 specifications). AO4918L is a Green Product
ordering option. AO4918 and AO4918L are electrically
identical.
Features
Q1
Q2
V_DS (V) = 30V
V_DS(V) = 30V
I_D = 9.3A (V_GS = 10V) I_D=8.3A (VGS = 10V
R_DS(ON) < 14.5mΩ <18mΩ (V_GS = 10V)
R_DS(ON) < 16mΩ
<27mΩ (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F<0.5V@1A
D1
D2
D2 1 8 G2
D2 2 7 D1/S2/K
G1 3 6 D1/S2/K
S1/A 4 5 D1/S2/K
SOIC-8
K
Q1
Q2
A
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1 Max Q2
Drain-Source Voltage
V_DS
30
30
Gate-Source Voltage
Continuous Drain _TA=25°C
Current ^A
T_A=70°C
Pulsed Drain Current^B
V_GS
±12
±20
9.3
8.3
I_D
7.4
6.7
I_DM
40
40
T_A=25°C
Power Dissipation T_A=70°C
Junction and Storage Temperature Range
P_D
T_J, T_STG
2
1.28
-55 to 150
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward T_A=25°C
Current ^A
T_A=70°C
Pulsed Diode Forward Current^B
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_F
I_FM
P_D
T_J, T_STG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.