AO4914_11 Datasheet, PDF (1/9 Pages) Alpha & Omega Semiconductors – 30V Dual N-Channel MOSFET with Schottky Diode

AO4914
30V Dual N-Channel MOSFET with Schottky Diode
General Description
Product Summary
The AO4914 uses advanced trench technology to provide _{Q1(N-Channel)}
excellent R_DS(ON) and low gate charge. The two MOSFETs
make a compact and efficient switch and synchronous
rectifier combination for use in DC-DC converters. A
Schottky diode is co-packaged in parallel with the
V_DS= 30V
I_D= 8A (V_GS=10V)
R_DS(ON) <20.5mΩ
synchronous MOSFET to boost efficiency further.
R_DS(ON) <28mΩ
Q2(N-Channel)
30V
8A (V_GS=10V)
R_DS(ON) <20.5mΩ (V_GS=10V)
R_DS(ON) <28mΩ (V_GS=4.5V)
ESD Protected
100% UIS Tested
100% R_g Tested
ESD Protected
100% UIS Tested
100% R_g Tested
SCHOTTKY
V_DS = 30V, I_F = 3A, V_F<0.5V@1A
SOIC-8
Top View
Bottom View
Top View
S1/A
G1
S2
G2
D1/K
D1/K
D2
G1
D2
D1
K
A
S1
Pin1
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Max Q1
Max Q2
Drain-Source Voltage
V_DS
30
30
Gate-Source Voltage
V_GS
±20
±20
Continuous Drain
T_A=25°C
Current
T_A=70°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
8
8
I_D
6.5
6.5
I_DM
40
40
I_AS, I_AR
19
19
E_AS, E_AR
18
18
T_A=25°C
Power Dissipation ^B T_A=70°C
2
2
P_D
1.3
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Parameter
Reverse Voltage
Continuous Forward ^TA=25°C
Current
T_A=70°C
Pulsed Diode Forward Current ^C
T_A=25°C
Power Dissipation ^B T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_F
I_FM
P_D
T_J, T_STG
Max Schottky
30
3
2.2
20
2
1.28
-55 to 150
D2
G2
S2
Units
V
V
A
A
mJ
W
°C
Units
V
A
W
°C
Rev 11: Mar. 2011
www.aosmd.com
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