AO4912 Datasheet, PDF (1/8 Pages) Alpha & Omega Semiconductors – Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor

AO4912
Asymmetric Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4912 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. The two
MOSFETs make a compact and efficient switch and
synchronous rectifier combination for use in DC-DC
converters. A Schottky diode is co-packaged in parallel
with the synchronous MOSFET to boost efficiency further
Standard Product AO4912 is Pb-free (meets ROHS &
Sony 259 specifications). AO4912L is a Green Product
ordering option. AO4912 and AO4912L are electrically
identical.
Features
Q1
V_DS (V) = 30V
I_D = 8.5A
R_DS(ON) < 17mΩ
R_DS(ON) < 25mΩ
Q2
V_DS(V) = 30V
I_D=7A (V_GS = 10V)
<26mΩ (V_GS = 10V)
<31mΩ (V_GS = 4.5V)
SCHOTTKY
V_DS (V) = 30V, I_F = 3A, V_F<0.5V@1A
D1
D2
D2 1 8
D2 2 7
G1 3 6
S1/A 4 5
SOIC-8
G2
D1/S2/K
D1/S2/K
D1/S2/K
K
Q1
Q2
A
G1
S1
G2
S2
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain T_A=25°C
Current ^A
T_A=70°C
I_D
Pulsed Drain Current ^B
I_DM
Power Dissipation
T_A=25°C
T_A=70°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Max Q1
30
±20
8.5
6.8
40
2
1.28
-55 to 150
Max Q2
30
±12
7
6.4
30
2
1.28
-55 to 150
Units
V
V
A
W
°C
Parameter
Reverse Voltage
Continuous Forward T_A=25°C
Current ^A
T_A=70°C
Pulsed Diode Forward Current ^B
Power Dissipation ^A
T_A=25°C
T_A=70°C
Junction and Storage Temperature Range
Symbol
V_DS
I_F
I_FM
P_D
T_J, T_STG
Maximum Schottky
30
3
2.2
20
2
1.28
-55 to 150
Units
V
A
W
°C
Alpha & Omega Semiconductor, Ltd.